Abstract: With the application of MEMS sensor in aircraft industry, the development of high temperature electrical insulation becomes more important than ever. In this work, Al2O3 thin film for high temperature electrical insulation was prepared by Dual Ion Beam Sputtering Deposition(DIBSD). The effect of the substrate temperature on the structure of as-sputtered Al2O3 thin films was analyzed by XRD and AFM, and the electrical resistance of Al2O3 thin films at temperature range from 25°C to 1000°C was also studied. Besides, thin film resistance temperature sensor was fabricated with as-sputtered Al2O3 thin film. The result shows that Al2O3 thin film sputtered by DIBSD is mainly in amorphous phase with compact and holeless structure. The electrical resistance of Al2O3 thin film with 2μm thickness could achieve 2GΩ and 5kΩ at room temperature and 800°C, respectively, which indicates good high temperature electrical resistance of the as-sputtered Al2O3 thin film.
Keywords: dual ion beam sputtering deposition; Al2O3 thin film; substrate temperature; high temperature insulation; temperature sensor
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