Abstract: In order to improve the photoluminescence (PL) performance of SiC, a three-layer structure porous SiC film was designed, the substrate was single crystal Si, the middle layer was the double pass anodic aluminum oxide (AAO) template, and the top layer was SiC film. SiC film was deposited on AAO template by magnetron sputtering, the deposition temperature was 100 ℃ to 500 ℃, and the deposition time was 1 min to 30 min. The effect of deposition temperature and time on PL property of SiC was investigated. The results show that the SiC film is amorphous phase, and SiC is mainly deposited on the upper skeleton structure of AAO template. At the deposition temperature of 200 ℃ and deposition time of 1 min, the PL intensity of SiC is enhanced to 14.23 times of blank sample. PL of porous SiC film is mainly from the main peak of 2.3 eV and the secondary peak of 2.8 eV. The main PL peak may be caused by the O vacancy in Al2O3 and SiC intrinsic PL. The secondary PL peak maybe comes from O vacancy in SiO2. The magnetron sputtering processing combined with AAO template is suitable to the rapid industrial fabrication of porous SiC film.
Key words: porous fluorescent SiC, anodic aluminum oxide, magnetron sputtering, deposition temperature, deposition time, photoluminescence performance
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