Abstract: By controlling argon-oxygen gas ratio during the sputtering, high c-axis oriented ZnO thin film was deposited on single crystal Si substrate. The full width at half maximum (FWHM) of ZnO (002) diffraction peak was only 0.3°. The room temperature photoluminescence of ZnO thin film had only one luminescence peak at 3.17eV, which was the third-order phonon companion luminescence peak (FXA-3LO) of ZnO acceptor defect.The appearance of this peak also showed that ZnO thin film had high purity and crystal quality.The resistivity of ZnO thin films was 160Ω·cm. Based on this ZnO film, the 18 pairs interdigital Au electrode structure was fabricated by lithography-lift off technology, and the line width/line spacing of the electrodes was 25μm/25μm.The sensors had good response to the 360-280nm ultraviolet light. The actual parameters of the sample were consistent with the design, and the photoelectric characteristic could meet the requirements. This work laid the design and technical foundation for the subsequent performance optimization of ZnO UV sensor.
Keywords: ZnO; UV sensor; magnetron sputtering; thin film